國立台灣大學機械工程學系暨研究所

演 講 公 告

Title

Directed Self-Assembly for Lithography Applications

Abstract:

Economics dictated that semiconductor devices need to be scaled approximately to 70% linearly in order to follow the pace of Moore’s law and maintain cost effectiveness. Optical lithography has been the driving force for scaling; however, it approaches its physical limit to print patterns beyond 22 nm node. Directed self-assembly (DSA), which combines“bottom-up” self-assembled polymers and “top-down” lithographically defined substrates, has been considered as a potential candidate to extend optical lithography. Benefit from nanometer-scale self-assembly features and the registration precision of advanced lithography, DSA provides precise and programmable nanopatterns beyond the resolution limit of conventional lithography. We have demonstrated DSA concepts including frequency multiplication and pattern rectification using guiding prepattern with proper chemical and topographical information generated by e-beam lithography. In addition, we seek to integrate DSA with 193 nm optical lithography in a straightforward manner in order to move DSA from the research stage to a viable manufacturing technology. Recently, we implemented various integration strategies using photolithography to produce guiding patterns for DSA. This new ability enables DSA to be applied to large areas with state-of-the-art lithography facilities.

Speaker

Dr. Joy Cheng

鄭博士是台灣大學化學系的校友，在完成大學課程與取得碩士學位後赴美深造，進入麻省理工學院材料科學與工程系(MIT Department of Materials Science & Engineering)取得博士學位。畢業後在MIT從事三年的博士後研究工作後加入IBM Almaden Research Center。鄭博士在可操控自組裝技術(directed self-assembly)與微影製程阻劑的行為與研究上是國際知名學者，有很傑出的表現。目前半導體製程已經步入45nm half-pitch，甚至更微細的境界。微影製程不僅挑戰著光學或電子光學的物理極限，同樣的，對於阻劑的性能要求，以及將阻劑行為表現加以modeling的需要，也是與時俱進。不管是Critical dimension (CD)、Line edge roughness (LER)、Throughput等性能指標，皆須建構在對阻劑的特性能有更充分的認識與控制，並且思考進一步分子行為控制的可能。鄭博士於MIT攻讀博士學位時開始接觸分子行為和self-assembly的相關研究，之後進入IBM Almaden Research Center，至今已有超過十年以上的經驗。期間針對directed self-assembly (DSA) ，以及光學與電子用阻劑相關的研究，發表超過三十篇論文，擔任多場重要國際會議的invited speaker、並獲得多項美國專利。Self assembly與lithography是奈米技術的兩大要角，鄭博士在這兩項技術都有所著墨，結合這兩項技術的共同發展是走向下一世代微影製程的重要方向。此次邀請鄭博士演講的目的是希望能透過鄭博士由材料工程的角度來看微影技術發展，提供另外一個面向的思考方式，並且透過多面向的交流激盪新的火花。

時 間 及 地 點

99年6月8日(星期二) 中午12:45 ~ 13:45

台大工學院綜合大樓734室